Journal of Materials Science

, Volume 30, Issue 19, pp 5031–5035 | Cite as

Schottky barrier height enhancement on n-In0.53Ga0.47As by (NH4)2S x surface treatment

  • S. T. Ali
  • A. Kumar
  • D. N. Bose
Article
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Accepted:

Abstract

(NH4)2S x Surface treatment was found to increase the barrier height (φBn) for Au/In0.53Ga0.47As Schottky junctions from 0.26 eV to 0.58 eV at 300 K as determined from Richardson plots. The ideality factorn thus decreased from 2.7 to 1.6 and the reverse saturation current densityJ0 from 9.4 Acm−2 to 3.4×10−5A cm−2. The values of the effective Richardson constant were also evaluated. The chemical state of In0.53Ga0.47As surfaces before and after (NH4)2S x modification, examined by X-ray photoelectron spectroscopy (XPS), indicated bond formation of S with In, Ga and As.

Keywords

Polymer Spectroscopy Barrier Height Surface Treatment Bond Formation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

  1. 1.
    K. Kajiyama, Y. Mizushima andS. Sakata.Appl. Phys. Lett. 23 (1973) 458.Google Scholar
  2. 2.
    H. Tamura, A. Yoshida, S. Muto andS. Hasuo,Jpn. J. Appl. Phys. 26 (1987) L7.Google Scholar
  3. 3.
    H. Morkoc, T. J. Drumond andC. M. Stanchak,IEEE Trans. Elect. Devices ED-28 (1981) 1.Google Scholar
  4. 4.
    S. Loualiche, H. Haridon, A. Lecorre, D. Lucrosnier, M. Salri andP. N. Favennec,Appl. Phys. Lett. 52 (1988) 540.Google Scholar
  5. 5.
    K. C. Hwang, S. S. Li, C. Park andT. J. Anderson,J. Appl. Phys. 67 (1990) 6571.Google Scholar
  6. 6.
    J. H. Kim, S. S. Li, L. Figueroa, T. F. Carruthers andR. S. Wagner,Ibid. 64 (1988) 6536.Google Scholar
  7. 7.
    P. Kordos, M. Marso, R. Meyer andH. Luth,Ibid. 72 (1992) 2347.Google Scholar
  8. 8.
    D. Khul, F. Hieronymi, E. M. Bottcher, T. Wolf, A. Krost andD. Bimberg,Elect. Lett. 26 (1990) 2107.Google Scholar
  9. 9.
    W. P. Hong, G. K. Chang andR. Bhat,IEEE Trans. Elect. Devices ED-36 (1989) 659.Google Scholar
  10. 10.
    T. Kikuchi, H. Ohno andH. Hasegawa,Elect. Lett. 24 (1988) 1208.Google Scholar
  11. 11.
    T. Suemasu, Y. Miyamoto andK. Furuya,Jpn. J. Appl. Phys. 30(10A) (1991) L-1702.Google Scholar
  12. 12.
    E. Yablonovitch, R. Bhat, C. E. Zah, T. J. Gmitter andM. A. Koza,Appl. Phys. Lett. 60 (1992) 371.Google Scholar
  13. 13.
    T. Sugino, Y. Sakamoto andJ. Shirafuji,Jpn. J. Appl. Phys. 32 (1993) L-239.Google Scholar
  14. 14.
    S. M. Sze, “Physics of semiconductor devices” 2nd. Edition (Wiley, New York, 1981).Google Scholar
  15. 15.
    S. T. Ali, A. Kumar andD. N. Bose, in IEEE Proceedings of the XVIIIth Annual Convention and Exhibition, Calcutta, November 1992.Google Scholar
  16. 16.
    S. T. Ali andD. N. Bose,Mater. Lett. 12 (1991) 388.Google Scholar
  17. 17.
    G. Y. Robinson, in “Physics and chemistry of III-V semiconductors” edited by C. W. Wilmsen (Plenum Press, New York, 1985) p. 406.Google Scholar
  18. 18.
    M. Procop,J. Electron Spectroscopy Related Phenomenon 59 (1992) R-1.Google Scholar
  19. 19.
    D. Gallet andG. Hollinger,Appl. Phys. Lett. 62 (1993) 982.Google Scholar
  20. 20.
    K. Sato, M. Sakata andH. Ikoma,Jpn. J. Appl. Phys. 32 (1993) 3354.Google Scholar

Copyright information

© Chapman & Hall 1995

Authors and Affiliations

  • S. T. Ali
    • 1
  • A. Kumar
    • 1
  • D. N. Bose
    • 1
  1. 1.Semiconductor Division, Materials Science CentreIndian Institute of TechnologyKharagpurIndia

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