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Preparation and properties of ZnS thin films by low-pressure metalorganic chemical vapour deposition

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Abstract

Low-pressure metalorganic chemical vapour deposition of ZnS thin films on silicon, oxidized silicon and glass substrates using Zn (C2H5)2 and C4H4S as source chemicals was investigated. The growth process and the film properties were characterized as functions of process parameters including substrate temperature, reactant ratio and reaction pressure. In general, growth rates as a function of substrate temperature were found to reach a maximum at a much lower temperature than that for growth at atmospheric pressure. In addition, growth rates increased with reaction pressure and thiophene flow rate depending on the temperature condition. The microstructure indicated that growths above 250°C possess a cubic (zincblende) structure, while growths below 150°C are polycrystalline of wurtzite structure. The resistivity varies from 104 Ω cm to a maximum of about 3×105 Ω cm for growth at 250°C, depending on the reactant ratio. The details are discussed in the text.

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Lee, C.H., Pueng, C.Y. Preparation and properties of ZnS thin films by low-pressure metalorganic chemical vapour deposition. J Mater Sci 28, 811–816 (1993). https://doi.org/10.1007/BF01151262

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Keywords

  • Polymer
  • Silicon
  • Microstructure
  • Growth Rate
  • Chemical Vapour Deposition