Journal of Materials Science

, Volume 24, Issue 3, pp 821–826 | Cite as

Dielectric properties of chemically vapour-deposited Si3N4

  • Takashi Goto
  • Toshio Hirai
Papers
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Accepted:

Abstract

The dielectric properties of chemically vapour-deposited (CVD) amorphous and crystalline Si3N4 were measured in the temperature range from room temperature to 800° C. The a.c. conductivity (σa.c.) of the amorphous CVD-Si3N4 was found to be less than that of the crystalline CVD-Si3N4 below 500° C, but became greater than that of the crystalline CVD-Si3N4 over 500° C due to the contribution of d.c. conductivity (σd.c.). The measured loss factor (ɛ″) and dielectric constant (ε′) of the amorphous CVD-Si3N4 are smaller than those of the crystalline CVD-Si3N4 in all of the temperature and frequency ranges examined. The relationships ofε″ αωn-1, (ε′-ε′∞) αωn-1 andε″/(ε′-ε′∞) = cot (nπ/2) (were observed for the amorphous and crystalline specimens, where ω is angular frequency andn is a constant. The values ofn of amorphous and crystalline CVD-Si3N4 were 0.8 to 0.9 and 0.6 to 0.8, respectively. These results may indicate that the a.c. conduction observed for both of the above specimens is caused by hopping carriers. The values of loss tangent (tanδ) increased with increasing temperature. The relationship of log (tanδ) ∝T was observed. The value of tanδ for the amorphous CVD-Si3N4 was smaller than that of the crystalline CVD-Si3N4.

Keywords

Polymer Dielectric Constant Dielectric Property Angular Frequency Loss Tangent 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Chapman and Hall Ltd. 1989

Authors and Affiliations

  • Takashi Goto
    • 1
  • Toshio Hirai
    • 1
  1. 1.Institute for Materials ResearchTohoku UniversitySendaiJapan

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