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Electrical properties of Bi2S3 thin films prepared by the dip-dry method

Abstract

Bi2S3 thin films have been prepared by the dip-dry method and their electrical properties such as conductivity, thermoelectric power and spectral response of photoconductivity were investigated. Some uncommon findings, such as a simultaneous increase in conductivity and thermoelectric power with thickness of film, are explained by Seto's model for polycrystalline silicon film duly modified for in homogeneities.

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Nayak, B.B., Acharya, H.N. Electrical properties of Bi2S3 thin films prepared by the dip-dry method. J Mater Sci 21, 46–50 (1986). https://doi.org/10.1007/BF01144697

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Keywords

  • Polymer
  • Silicon
  • Thin Film
  • Electrical Property
  • Spectral Response