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Applied Physics A

, Volume 48, Issue 2, pp 95–106 | Cite as

Theoretical approaches to nonlinear and chaotic dynamics of generation-recombination processes in semiconductors

  • E. Schöll
Nonlinear and Chaotic Transport Phenomena in Semiconductors

Abstract

We present an overview of recent progress in the theoretical modelling of nonlinear and chaotic dynamics induced by generation and recombination processes of charge carriers. Impact ionisation of impurities is the autocatalytic, i.e. destabilizing, step of three different physical mechanisms for spontaneous, self-sustained oscillations of the carrier density. The “restoring force” is furnished by one of the following three processes: (i) dielectric relaxation of the internal electric field, (ii) energy relaxation of the hot carriers, and (iii) trapping at impurities, where the discrete nature of the individual generationrecombination processes is taken into account.

PACS

72.20.Ht 72.20.Jv 05.45+b 

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Copyright information

© Springer-Verlag 1989

Authors and Affiliations

  • E. Schöll
    • 1
  1. 1.Institut für Theoretische PhysikRWTHAachenGermany

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