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Measurement of the thermal conductivity of molten semiconductors

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Abstract

The thermal conductivity of molten InSb in the temperature range between 800 and 870 K was measured by the transient hot-wire method using a ceramic probe. The probe was fabricated from a tungsten wire printed on an alumina substrate and coated with a thin alumina layer. The thermal conductivity was found to be about 18 W· m·Kat the melting point and increased moderately with increasing temperature. The thermal conductivity of alumina used as the substrate for the probe was also measured in the same temperature range.

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On leave from NEC Corporation.

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Nakamura, S., Hibiya, T. & Yamamoto, F. Measurement of the thermal conductivity of molten semiconductors. Int J Thermophys 9, 933–940 (1988). https://doi.org/10.1007/BF01133261

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Key words

  • alumina
  • high temperature
  • InSb
  • thermal conductivity
  • transient hot-wire method