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Behaviour of B-N-Si under high pressure and high temperature

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Abstract

The phase relations of the B-N-Si system have been studied using a quenching method up to 10GPa and 2000 °C using a high-pressure apparatus of the octahedral anvil type. Pressure-temperature conditions for obtaining z-BN (diamond analogue of boron nitride) were delineated for turbostratic BN (t-BN), t-BN/amorphous Si3N4 and t-BN/β-Si3N4. These conditions shift toward higher regimes of temperature as amorphous Si3N4 or β-Si3N4 is incorporated into t-BN. Spontaneous sintering occurringin situ at high pressure yields z-BN-based composite compacts.

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Yoshihara, H., Onodera, A., Suito, K. et al. Behaviour of B-N-Si under high pressure and high temperature. J Mater Sci 25, 4595–4603 (1990). https://doi.org/10.1007/BF01129912

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Keywords

  • Polymer
  • Boron
  • High Pressure
  • Nitride
  • Phase Relation