Preparation and photovoltaic properties of anodically grown Ag2O films
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- Tselepis, E. & Fortin, E. J Mater Sci (1986) 21: 985. doi:10.1007/BF01117383
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The semiconducting and photovoltaic properties of p-type Ag2O films grown anodically on silver electrodes were studied, in view of possible applications in solar energy conversion. Films were grown in different alkaline solutions; the best results were obtained for 0.02M Ag2SO4 + 0.17M NH4OH + 5.7 × 10−3M Ba(OH)2 saturated with Ag2O powder, stirred mechanically at room temperature. Film thicknesses of up to 10μm were thus obtained for the first time in anodically grown Ag2O. Photovoltaic spectra taken at 300 K give a bandgap ofEg = 1.42 ± 0.04 eV. Evaporated gold on Ag2O appears to be ohmic while aluminium and platinum are rectifying. The barrier height of Ag/Ag2O is 0.90 ± 0.02 eV, that of Al/Ag2O is 0.93 ± 0.02 eV, and that of platinum 0.94 ± 0.02 eV. The best cells give an open-circuit voltage,Voc, of over 150 mV, and a short circuit current,Isc = 100μA cm−2 under 50 mW cm−2 illumination.