Journal of Materials Science

, Volume 21, Issue 3, pp 985–988

Preparation and photovoltaic properties of anodically grown Ag2O films

  • E. Tselepis
  • E. Fortin

DOI: 10.1007/BF01117383

Cite this article as:
Tselepis, E. & Fortin, E. J Mater Sci (1986) 21: 985. doi:10.1007/BF01117383


The semiconducting and photovoltaic properties of p-type Ag2O films grown anodically on silver electrodes were studied, in view of possible applications in solar energy conversion. Films were grown in different alkaline solutions; the best results were obtained for 0.02M Ag2SO4 + 0.17M NH4OH + 5.7 × 10−3M Ba(OH)2 saturated with Ag2O powder, stirred mechanically at room temperature. Film thicknesses of up to 10μm were thus obtained for the first time in anodically grown Ag2O. Photovoltaic spectra taken at 300 K give a bandgap ofEg = 1.42 ± 0.04 eV. Evaporated gold on Ag2O appears to be ohmic while aluminium and platinum are rectifying. The barrier height of Ag/Ag2O is 0.90 ± 0.02 eV, that of Al/Ag2O is 0.93 ± 0.02 eV, and that of platinum 0.94 ± 0.02 eV. The best cells give an open-circuit voltage,Voc, of over 150 mV, and a short circuit current,Isc = 100μA cm−2 under 50 mW cm−2 illumination.

Copyright information

© Chapman and Hall Ltd. 1986

Authors and Affiliations

  • E. Tselepis
    • 1
  • E. Fortin
    • 1
  1. 1.Department of PhysicsUniversity of OttawaOttawaCanada

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