The self-diffusion of30Si in high purity and N-doped α-SiC single crystals has been measured in the temperature range 2273 to 2573 K. The diffusion (D Si * ) in N-doped crystals exceeds that in the pure crystals because of the increase in the concentration of the charged acceptor-type Si vacancies in the presence of the N species. A comparison ofD C * andD Si * shows that the former exceeds the latter by approximately 102, primarily because of the greater entropy of migration of C. Possible crystallographic paths of transport for both species are also discussed.
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Hong, J.D., Davis, R.F. & Newbury, D.E. Self-diffusion of silicon-30 in α-SiC single crystals. J Mater Sci 16, 2485–2494 (1981). https://doi.org/10.1007/BF01113585
- High Purity
- Pure Crystal