Journal of Materials Science

, Volume 23, Issue 7, pp 2584–2588

Thermal expansion coefficients of doped and undoped silica prepared by means of PCVD

  • P. K. Bachmann
  • D. U. Wiechert
  • T. P. M. Meeuwsen


The thermal expansion coefficient of silica prepared by means of low-pressure plasma-induced chemical vapour deposition has been investigated in the temperature range 20 to 750° C. Undoped, fluorine-doped (up to 5wt%), germanium-doped (up to 14 wt%), as well as F/GeO2-codoped samples were measured and compared to NBS standard silica samples. Fluorine-doped silica shows a lower thermal expansion coefficient than the NBS standard. A surprising hysteresis effect in the measured expansion curves was found. Its concentration dependence and annealing is discussed.


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  1. 1.
    P. Geittner, D. Küppers andH. Lydtin,Appl. Phys. Lett. 18 (1976) 645.Google Scholar
  2. 2.
    P. Bachmann,Pure Appl. Chem. 57 (1985) 1299.Google Scholar
  3. 3.
    P. Bachmann, P. Geittner andH. Lydtin, “Technical Digest, Conference on Optical Fiber Communications” (Optical Society of America, Washington, D.C., 1986) paper WA1, p. 76.Google Scholar
  4. 4.
    P. Bachmann, H. Hübner, M. Lennartz, E. Steinbeck andJ. Ungelenk, 8th European Conference on Optical Communications, Cannes, France, Conference Proceedings (1982) p. 66.Google Scholar
  5. 5.
    P. K. Bachmann, P. Geittner, D. Leers andH. Wilson,J. Lightwave Technol. LT-4 (1986) 813.Google Scholar
  6. 6.
    P. K. Bachmann, D. Leers, H. Wehr, D. U. Wiechert andJ. A. V. Steenwijk,ibid. LT-4 (1986) 858.Google Scholar
  7. 7.
    C. A. M. Mulder, R. K. Janssen, P. Bachmann andD. Leers,J. Non-Cryst. Solids 72 (1985) 242.Google Scholar
  8. 8.
    W. Hermann, A. Reith andH. Rau,Ber. Deut. Buns. Phys. Chem. (1986) submitted.Google Scholar
  9. 9.
    P. K. Bachmann, W. Hermann, H. Wehr andD. U. Wiechert,Appl. Optics 25 (1986) 1093.Google Scholar
  10. 10.
    P. K. Bachmann, W. Hermann, H. Wehr andD. U. Wiechert,ibid. 26 (1987) 1175.Google Scholar
  11. 11.
    H. Wehr andD. U. Wiechert,Mater. Res. Bull. 21 (1986) 559.Google Scholar
  12. 12.
    Y. Y. Huang, A. Sarkar andP. C. Schultz,J. Non-Cryst. Solids 27 (1978) 29.Google Scholar
  13. 13.
    P. C. Schultz, 2nd International Otto-Schott-Colloquium in Jena, DDR, Conference Proceedings (1982) p. 12.Google Scholar
  14. 14.
    I. D. Aggarwal andE. N. Randall, German Patent No. DE 26 32 689 C2 (1986).Google Scholar
  15. 15.
    H. Takahashi, A. Oyobe, M. Kosuge andR. Setaka, 11th European Conference on Optical Communication, Barcelona, Spain, Technical Digest, 1 (1986) p. 3.Google Scholar
  16. 16.
    P. Bachmann, P. Geittner, D. Leers, M. Lennartz andH. Wilson,Electron. Lett. 20 (1984) 35.Google Scholar

Copyright information

© Chapman and Hall Ltd. 1988

Authors and Affiliations

  • P. K. Bachmann
    • 1
  • D. U. Wiechert
    • 1
  • T. P. M. Meeuwsen
    • 2
  1. 1.Philips Research LaboratoriesAachenWest Germany
  2. 2.Philips Research LaboratoriesEindhovenThe Netherlands

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