The article presents results of a numerical calculation, made with a computer, of several parameters and functions characterizing the electron spectrum of heavily doped semiconductors; in addition, the article presents theoretically calculated and experimentally obtained dispersion curves of the absorption coefficient in the region of interband transitions in heavily doped n-GaAs. The numerical calculation method is based upon the work of V. L. Bonch-Bruevich, who used Green functions. Calculations and experimental measurements were made for n-GaAs with free electron concentrations of 4.8·1018 cm−3 at temperatures of 10–610‡K. Agreement between the theoretically calculated and the experimentally obtained values of the absorption coefficient is observed in the edge region at photon energies exceeding the width of the forbidden band of the pure semiconductor.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 30–35, August, 1975.
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Levkov, A.N., Lomakin, G.G. Electron spectrum and intrinsic absorption of heavily doped n-GaAs. Soviet Physics Journal 18, 1084–1088 (1975). https://doi.org/10.1007/BF01110025
- Absorption Coefficient
- Numerical Calculation
- Photon Energy
- Experimental Measurement
- Calculation Method