Thermal expansion of the cubic (3C) polytype of SiC
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- Li, Z. & Bradt, R.C. J Mater Sci (1986) 21: 4366. doi:10.1007/BF01106557
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Thermal expansion of the cubic beta or (3C) polytype of SiC was measured from 20 to 1000° C by the X-ray diffraction technique. Over that temperature range, the coefficient of thermal expansion can be expressed as the second order polynominal: α11=3.19×10−6+ 3.60×10−9T−1.68×10−12T2 (1/° C). It increases continuously from about 3.2×10−6/° C at room temperature to 5.1×10−6/° C at 1000° C, with an average value of 4.45 × 10−6/° C between room temperature and 1000° C. This trend is compared with other published results and is discussed in terms of structural contributions to the thermal expansion.