Advertisement

Applied Physics B

, Volume 62, Issue 1, pp 3–10 | Cite as

Ultrafast dynamics of carrier-induced absorption changes in highly-excited CdSe nanocrystals

  • S. Hunsche
  • T. Dekorsy
  • V. Klimov
  • H. Kurz
Regular Papers

Abstract

We use femtosecond time-resolved transmission spectroscopy to study the density and time dependence of transient absorption changes of CdSe nanocrystals. Our data show pronounced absorption saturation up to complete bleaching of the lowest optical transition. At high carrier density the nonlinear spectra show several peaks that can be related to the two lowest quantized electron states. Thetime dependence of the carrier-induced absorption changes indicates an ultrafast relaxation process within the strongly broadened absorption lines.

PACS

78.47.+p 73.20.Dx 71.35,+z 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    H. Haug (ed.):Optical Nonlinearities and Instabilities in Semiconductors (Academic, Boston 1988)Google Scholar
  2. 2.
    A. I. Ekimov, Al. L. Efros, A. A. Onushchenko: Solid State Commun.56, 921 (1985)Google Scholar
  3. 3.
    L. Brus: IEEE J. QE22, 1909 (1986)Google Scholar
  4. 4.
    M. G. Bawendi, W. L. Wilson, L. Rothberg, P. J. Carroll, T. M. Jedju, M. L. Steigerwald, L.E. Brus: Phys. Rev. Lett.65, 1623 (1990)Google Scholar
  5. 5.
    P. Roussignol, D. Ricard, C. Flytzanis, N. Neuroth: Phys. Rev. Lett.62, 312 (1989)Google Scholar
  6. 6.
    S. H. Park, R. A. Morgan, Y. Z. Hu, M. Lindberg, S. W. Koch, N. Peyghambarian: J. Opt. Soc. Am. B7, 2097 (1990)Google Scholar
  7. 7.
    C. Spiegelberg, F. Henneberger, J. Puls: Superlatt. Microstruct.9, 487 (1991)Google Scholar
  8. 8.
    A. I. Ekimov, F. Hache, M. C. Schanne-Klein, D. Ricard, C. Flytzanis, I. A. Kudryatsev, T. V. Yazeva, A. V. Rodina, Al. L. Efros: J. Opt. Soc. Am. B10, 100 (1993)Google Scholar
  9. 9.
    S. Gaponenko, U. Woggon, M. Saleh, W. Langbein, A. Uhrig, M. Müller, C. Klingshirn: J. Opt. Soc. Am. B10, 1947 (1993)Google Scholar
  10. 10.
    D. J. Norris, A. Sacra, C. B. Murray, M. G. Bawendi: Phys. Rev. Lett.72, 2612 (1994)Google Scholar
  11. 11.
    V. L. Colvin, J. J. Shiang, W. Hoheisel, C. Johnsona, R. W. Schoenlein, D. W. Mittleman, S. J. Rosenthal, C. V. Shank, A. P. Alivisatos: In:Ultrafast Phenomena IX, ed. by P. F. Barbara, W. H. Knox, G.A. Mouron, A. H. Zewail, Springer Ser. Chem. Phys., Vol. 60 (Springer, Berlin, Heidelberg 1994) p. 351Google Scholar
  12. 12.
    R. Cingolani, C. Moro, D. Manno, M. Striccoli, C. DeBlasi, G. C. Righini, M. Ferrara: J. Appl. Phys.70, 6898 (1991)Google Scholar
  13. 13.
    M. G. Bawendi, P. J. Caroll, W. L. Wilson, L. E. Brus: J. Chem. Phys.96, 946 (1992)Google Scholar
  14. 14.
    D. M. Mittleman, R. W. Schoenlein, J. J. Shiang, V. L. Colvin, A. P. Alivisatos, C. V. Shank: Phys. Rev. B49, 14435 (1994)Google Scholar
  15. 15.
    M. Kull, J.-L. Coutaz: J. Opt. Soc. Am.7, 1463 (1990)Google Scholar
  16. 16.
    U. Woggon, S. Gaponenko, W. Langbein, A. Uhrig, C. Klingshim: Phys. Rev. B47, 3684 (1993)Google Scholar
  17. 17.
    Y. V. Vandyshev, V. S. Dneprovskii, V. I. Klimov: Sov. Phys. JETP74, 144 (1992)Google Scholar
  18. 18.
    V. S. Dneprovskii, V. A. Karavanskii, V. I. Klimov: Phys. Solid State35, 1297 (1993)Google Scholar
  19. 19.
    N. Peyghambarian, B. Fluegel, D. Hulin, A. Migus, M. Joffre, A. Antonetti, S. W. Koch, M. Lindberg: IEEE J. QE25, 2516 (1989)Google Scholar
  20. 20.
    R. W. Schoenlein, D. M. Mittleman, J. J. Shiang, A. P. Alivisatos, C. V. Shank: Phys. Rev. Lett.70, 1014 (1993)Google Scholar
  21. 21.
    P. Roussignol, D. Ricard, J. Lukasik, C. Flytzanis: J. Opt. Soc. Am. B4, 5 (1987)Google Scholar
  22. 22.
    J. P. Zheng, H. S. Kwok: Appl. Phys. Lett.54, 1 (1989)Google Scholar
  23. 23.
    P. Maly, F. Trojanek, A. Svoboda: J. Opt. Soc. Am.10, 1890 (1993)Google Scholar
  24. 24.
    S. Schmitt-Rink, D. A. B. Miller, D. S. Chemla: Phys. Rev. B35, 8113 (1987)Google Scholar
  25. 25.
    H. Haug, S. W. Koch:Quantum Theory of the Electronic and Optical Properties of Semiconductors (World Scientific, Singapore 1993)Google Scholar
  26. 26.
    L. Banyai, P. Gilliot, Y. Z. Hu, S. W. Koch: Phys. Rev. B45, 14136 (1992)Google Scholar
  27. 27.
    Y. Z. Hu, S. W. Koch, M. Lindberg, N. Peyghambarian, E. L. Pollock, F. F. Abraham: Phys. Rev. Lett.64, 1805 (1990)Google Scholar
  28. 28.
    Y. Z. Hu, M. Lindberg, S. W. Koch: Phys. Rev. B42, 1713 (1990)Google Scholar
  29. 29.
    D. Ricard, M. Ghanassi, M. C. Schanne-Klein: Opt. Commun.108, 311 (1994)Google Scholar
  30. 30.
    D. B. Tran Thoai, Y. Z. Hu, S. W. Koch: Phys. Rev. B42, 4137 (1990)Google Scholar
  31. 31.
    K. I. Kang, B. P. McGinnis, Sandalphon, Y. Z. Hu, S. W. Koch, N. Peyghambarian, A. Mysyrowicz, L. C. Liu, S. H. Risbud: Phys. Rev. B45, 3465 (1992)Google Scholar
  32. 32.
    T. Dekorsy, T. Pfeifer, W. Kütt, H. Kurz: Phys. Rev. B47, 3842 (1993)Google Scholar
  33. 33.
    V. Klimov, S. Hunsche, H. Kurz: Phys. Rev. B50, 8110 (1994)Google Scholar
  34. 34.
    F. de Rougemont, R. Frey, P. Roussignol, D. Ricard, C. Flytzanis: Appl. Phys. Lett.50, 1619 (1987)Google Scholar
  35. 35.
    V. S. Dneprovskii, Al. L. Efros, A. I. Ekimov, V. I. Klimov, I. A. Kudriavtsev, M. G. Novikov: Solid State Commun.74, 555 (1990)Google Scholar
  36. 36.
    M. Ghanassi, M. C. Schanne-Klein, F. Hache, A. I. Ekimov, D. Ricard, C. Flytzanis: Appl. Phys. Lett.62, 78 (1992)Google Scholar
  37. 37.
    We used the following effective masses: electrons: 0.11m e; heavy holes: 1.0m e; light holes: 0.3m e; split-off holes: 0.48m e Google Scholar
  38. 38.
    This is in contrast with [33], where we adopted the notation of [8]Google Scholar
  39. 39.
    S. Hunsche, H. Heesel, A. Ewertz, H. Kurz, J. H. Collet: Phys. Rev. B48, 17818 (1993)Google Scholar
  40. 40.
    R. Kersting, U. Lemmer, R. F. Mahrt, K. Leo, H. Kurz, H. Bässler, E. O. Göbel: Phys. Rev. Lett.70, 3820 (1993)Google Scholar
  41. 41.
    C. B. Duke, G. D. Mahan: Phys. Rev. A139, 1965 (1965)Google Scholar

Copyright information

© Springer-Verlag 1996

Authors and Affiliations

  • S. Hunsche
    • 1
  • T. Dekorsy
    • 1
  • V. Klimov
    • 1
  • H. Kurz
    • 1
  1. 1.Institut für Halbleitertechnik IIRheinisch-Westfälische Technische Hochschule AachenAachenGermany

Personalised recommendations