Electroplating silicon and titanium in molten fluoride media
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Abstract
The electrolytic reduction mechanisms of K2SiF6 and K2TiF6 solutions in LiF-KF and LiF-NaF-KF eutectic mixtures have been studied at temperatures between 550 and 850°C.
The reduction of K2SiF6 proceeds by two successive electron transfers, coupled with an antidisproportionation reaction Very pure thin silicon layers, up to 300 μm thick, were obtained on a silver substrate.
$$Si(IV) + 2e \to Si(II) + 2e \to Si$$
$$Si(IV) + Si \underset{{k_b }}{\overset{{k_b }}{\longleftrightarrow}} 2Si(II)$$
The cathodic reduction of TiF 6 2− ions occurs in two well separated reversible steps, Adherent coatings of pure titanium were found to be linked to the copper substrate by an interdiffusion sublayer comprising Ti2Cu, TiCu, Ti2Cu3 and TiCu4 which were formed in a narrow potential domain preceding titanium deposition.
$$TiF_6^{2--} + e \to TiF_6^{3--} + 3e \to Ti + 6F^--$$
Keywords
Silicon Titanium Fluoride Pure Titanium Silicon Layer
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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