Radial distribution measurement of SiH* in a low-pressure silane plasma

  • Yuichiro Asano
  • Douglas S. Baer
  • Rolf Hernberg
  • Ronald K. Hanson


The radial emission intensity distribution of SiH* (A2Δ,v=0) over the substrate of a low-pressure silane plasma was investigated for various substrate temperatures (Ts=20–320°C). Measured lateral intensities were converted to radial emission coefficients using an Abel inversion. The intensity near the center of the substrate was found to increase withTs and yielded an activation energyEa of 1.1 kcal/mole. This result is consistent with the value ofEa determined by laser-induced flourescence measurements obtained previously. Radially resolved emission data obtained by varying the operating parameters of rf power, gas flow rate, silane/argon mixing rate, and total gas pressure provide a useful means of determining the conditions necessary to generate a uniform plasma.

Key Words

Optical emission spectroscopy Abel inversion rf discharge silane plasma 


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Copyright information

© Plenum Publishing Corporation 1988

Authors and Affiliations

  • Yuichiro Asano
    • 1
  • Douglas S. Baer
    • 2
  • Rolf Hernberg
    • 3
  • Ronald K. Hanson
    • 2
  1. 1.Technical Research DivisionKawasaki Steel CorporationChiba 280Japan
  2. 2.High-Temperature Gasdynamics Laboratory, Mechanical Engineering DepartmentStanford University
  3. 3.Electrical Engineering DepartmentTampere University of TechnologyTampereFinland

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