High power non-linear magnetophotoconductivity in n-GaAs using the UCSB free electron laser

  • J. Kaminski
  • J. Spector
  • W. Prettl
  • M. Weispfenning


The kinetics of electrons bound to shallow donor impurities in n-GaAs was investigated by saturation spectroscopy using the University of California at Santa Barbara free electron laser. The resonant photothermal conductivity from 1s–2p+ transitions was measured at intensities greatly exceeding previous studies. Saturation of bound-to-free photoionization transitions was measured from 0 to 4 Tesla. The 1s–2p+ resonant photoconductive signal shows a distinct intensity dependence caused by the competing bound-to-free transitions which saturate differently. Evaluation of the electron recombination kinetics allows us to calculate the transition time of electrons from the 2p+ level to the ground state, the recombination time of free electrons, and the thermal ionization probability of the 2p+ state.


Spectroscopy Recombination High Power Free Electron Transition Time 
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Copyright information

© Plenum Publishing Corporation 1988

Authors and Affiliations

  • J. Kaminski
    • 1
  • J. Spector
    • 1
  • W. Prettl
    • 2
  • M. Weispfenning
    • 2
  1. 1.Department of Physics and Center for Free Electron Laser StudiesUniversity of CaliforniaSanta Barbara
  2. 2.Institut fur Angewandte Physik der Universitat RegensburgRegensburgWest Germany

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