A stress tunable gallium doped germanium infrared detector system
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Abstract
A simple partable cryostat system for studying photoconductivity in semiconductors under variable uniaxial stress at liquid helium temperatures is described. It has been used with a Fourier transform spectrometer to determine the spectral response of the photoconductivity of gallium doped germanium between 10 and 140 cm−1 as a function of stress and electric field. Details are also presented of the variation of breakdown voltage and dynamic resistance as a function of stress under low background conditions.
Key words
photoconductivity stress-induced germanium far-infraredPreview
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© Plenum Publishing Corporation 1985