Ka/Q band GaAs IMPATT amplifier technology

  • G. Jerinic
  • J. Fines
  • M. Cobb
  • M. Schindler
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Abstract

GaAs IMPATT diodes are capable of generating 2 to 3 W simultaneously with 18–22% efficiency in the 33 GHz to 46 GHz frequency band. The design of the amplifier circuits which utilize these devices is discussed. The circuit design is based on a 3-step closed form algorithm. The first step is a passive circuit characterization with an automatic network analyzer. In the second step, a computer is used to generate diode device lines. The third step is load line synthesis for predictable operation. The resulting performance is described. 2 W over a 2GHz bandwidth was achieved simultaneously with a minimum gain of 12 dB.

Keywords

GaAs Frequency Band Network Analyzer Closed Form Circuit Design 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

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Copyright information

© Plenum Publishing Corporation 1985

Authors and Affiliations

  • G. Jerinic
    • 1
  • J. Fines
    • 1
  • M. Cobb
    • 1
  • M. Schindler
    • 1
  1. 1.Raytheon Research DivisionLexington

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