Absolute radiometry using silicon heterophotodiodes with the structure In2O3-SiOx-nSi
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The main results of experimental investigations of heterophotodiodes with the structure In2O3-SiOx-nSi and absolute radiometers utilizing such elements are discussed. An arrangement of four or even three diodes in a mirror trap geometry eliminates nonuniformity of the sensitivity, obviates the need for precise measurements of the spectral reflection coefficients of their front surfaces, and helps to reduce the error of such a radiometer to 0.1%.
KeywordsSilicon Reflection Physical Chemistry Analytical Chemistry Experimental Investigation
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