On steady state Euler-Poisson models for semiconductors
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This paper is concerned with an analysis of the Euler-Poisson model for unipolar semiconductor devices in the steady state isentropic case. In the two-dimensional case we prove the existence of smooth solutions under a smallness assumption on the prescribed outflow velocity (small boundary current) and, additionally, under a smallness assumption on the gradient of the velocity relaxation time. The latter assumption allows a control of the vorticity of the flow and the former guarantees subsonic flow. The main ingredient of the proof is a regularization of the equation for the vorticity.
Also, in the irrotational two- and three-dimensional cases we show that the smallness assumption on the outflow velocity can be replaced by a smallness assumption on the (physical) parameter multiplying the drift-term in the velocity equation. Moreover, we show that solutions of the Euler-Poisson system converge to a solution of the drift-diffusion model as this parameter tends to zero.
KeywordsSteady State Vorticity Smooth Solution Semiconductor Device Main Ingredient
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