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Avalanche multiplication of charge carriers in isotype GaAs-Ga1−xAlxAs n+-v-n heterojunctions

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The current-voltage characteristics of n+-v-n structure based on GaAs and Ga1−xAlxAs with x=0.2–0.8 were investigated. Voltages of 7–30 V lead to avalanche multiplication of charge carriers in the high-resistance ν layer. Depending on the C-band discontinuity ϕo on the n+-GaAs-ν-Ga1−xAlxAs junction, the prebreakdown current is limited either by the probability of electron tunneling (ϕo > 0.3 eV) or by space charge in the v layer (ϕo < 0.2 eV). An expression for the multiplication coefficient in the case of space-charge limitation of the prebreakdown current is obtained. It is shown that in the structures in question the effect of external factors on the multiplication of electrons and holes can be investigated separately.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 80–84, June, 1978.

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Ptashenko, A.A., Timokhov, F.P. Avalanche multiplication of charge carriers in isotype GaAs-Ga1−xAlxAs n+-v-n heterojunctions. Soviet Physics Journal 21, 761–765 (1978). https://doi.org/10.1007/BF00936688

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  • GaAs
  • Charge Carrier
  • External Factor
  • Space Charge
  • Electron Tunneling