Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Avalanche multiplication of charge carriers in isotype GaAs-Ga1−xAlxAs n+-v-n heterojunctions

  • 15 Accesses

Abstract

The current-voltage characteristics of n+-v-n structure based on GaAs and Ga1−xAlxAs with x=0.2–0.8 were investigated. Voltages of 7–30 V lead to avalanche multiplication of charge carriers in the high-resistance ν layer. Depending on the C-band discontinuity ϕo on the n+-GaAs-ν-Ga1−xAlxAs junction, the prebreakdown current is limited either by the probability of electron tunneling (ϕo > 0.3 eV) or by space charge in the v layer (ϕo < 0.2 eV). An expression for the multiplication coefficient in the case of space-charge limitation of the prebreakdown current is obtained. It is shown that in the structures in question the effect of external factors on the multiplication of electrons and holes can be investigated separately.

This is a preview of subscription content, log in to check access.

Literature cited

  1. 1.

    A. A. Ptashchenko and F. P. Timokhov, Ukr. Fiz. Zh.,22, 1111 (1977).

  2. 2.

    A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions, Academic Press, New York-London (1972).

  3. 3.

    O. D. Knab, V. I. Magalyas, A. F. Smirnov, V. D. Frolov, and I. A. Shmerkin, Fiz. Tekh. Poluprovodn.,6, 532 (1972).

  4. 4.

    T. N. Danilova, A. N. Imenkov, B. V. Tsarenkov, and Yu. N. Yakovlev, Fiz. Tekh. Poluprovodn.,8, 1725 (1974).

  5. 5.

    W. Mönch, Phys. Status Solidi,36, 9 (1968).

  6. 6.

    M. Lampert and P. Mark, Current Injection in Solids, Academic Press, New York (1970).

  7. 7.

    D. J. Dumin and G. L. Pearson, J. Appl. Phys.,36, 3418 (1965).

  8. 8.

    V. I. Korol'kov, V. G. Nikitin, and D. N. Tret'yakov, Fiz. Tekh. Poluprovodn.,8, 2355 (1974).

  9. 9.

    I. K. Vereshchagin, Electroluminescence of Crystals [in Russian], Nauka, Moscow (1974).

Download references

Author information

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 80–84, June, 1978.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Ptashenko, A.A., Timokhov, F.P. Avalanche multiplication of charge carriers in isotype GaAs-Ga1−xAlxAs n+-v-n heterojunctions. Soviet Physics Journal 21, 761–765 (1978). https://doi.org/10.1007/BF00936688

Download citation

Keywords

  • GaAs
  • Charge Carrier
  • External Factor
  • Space Charge
  • Electron Tunneling