Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Experimental evidence for GaAs surface quality affecting ohmic contact properties

  • 42 Accesses

  • 4 Citations

Abstract

An experimental study is described of barrier heights at the junction between (111) faces of semiconductingn-type bulk GaAs and alloyed In−Ge−Ag metal contacts. It is observed that strong corrugation of the semiconducting surface causes the barrier height to be higher than that of flat surfaces.

This is a preview of subscription content, log in to check access.

References

  1. 1.

    H. Hartnagel, B. L. Weiss: J. Mat. Sci.8, 1061 (1973)

  2. 2.

    W. Tantraporn: J. Appl. Phys.41, 4669 (1970)

  3. 3.

    F. A. Padovani: InSemiconductors and Semimetals, Vol.7, ed. by Willardson, R. K., and Beer, A. C.: (Academic Press, New York 1971)

Download references

Author information

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Paria, H., Hartnagel, H. Experimental evidence for GaAs surface quality affecting ohmic contact properties. Appl. Phys. 10, 97–99 (1976). https://doi.org/10.1007/BF00929535

Download citation

PACS Codes

  • 73
  • 85.30