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Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann

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The statistics of the sputtering process, which has been used to explain sputterbroadening effect due to surface roughness, has been treated with conditional probabilities. This results in the relationship,\({{\Delta z} \mathord{\left/ {\vphantom {{\Delta z} z}} \right. \kern-\nulldelimiterspace} z} \propto \sqrt {(1 + \overline \gamma )/z} \), instead of\({{\Delta z} \mathord{\left/ {\vphantom {{\Delta z} z}} \right. \kern-\nulldelimiterspace} z} \propto {1 \mathord{\left/ {\vphantom {1 {\sqrt z }}} \right. \kern-\nulldelimiterspace} {\sqrt z }}\) derived by S. Hofmann [Appl. Phys.9, 59 (1976)], where δz,z, and\(\overline \gamma \) are the depth resolution, sputtered depth and sputtering yield, respectively.

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Shimizu, R. Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann. Appl. Phys. 18, 425–426 (1979). https://doi.org/10.1007/BF00899698

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