Results are presented from a study of structural phase changes in the system (GeSe3.5)100−xBix, obtained by differential and derivative thermal analysis, together with the temperature dependence of electrical resistivity and thermo-emf in both solid and liquid states. The results indicate that introduction of Bi into chalcogenide GeSe3.5 vitreous semiconductors leads to an increase in the ability to crystallize and change in the characteristic temperatures associated with phase transformations. However in both solid and liquid phases for chalcogenide vitreous semiconductors (GeSe3.5)94Bi6 the thermo-emf is positive in sign, while for (GeSe3.5)92Bi8 it is negative. The inversion of the sign of thermo-emf in the system (GeSE3.5)100/s-xBix is explained by electronic considerations.
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Ampilogov, V.N., Vikhrov, S.P., Dobosh, M.V. et al. Physicochemical properties and electrical conductivity of glasses and alloys in the system Bi - Ge - Se. Soviet Physics Journal 27, 400–402 (1984). https://doi.org/10.1007/BF00898610
- Electrical Conductivity
- Liquid Phasis
- Thermal Analysis
- Phase Transformation
- Physicochemical Property