Soviet Physics Journal

, Volume 30, Issue 2, pp 149–153 | Cite as

Effective mass of heavy holes in diamond-like semiconductors

  • P. M. Gritsyuk
  • K. Ya. Shtibel'man
  • V. M. Kondratenko
Semiconductor and Dielectric Physics
Received:
  • 47 Downloads

Abstract

Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account to the Löwdin prucedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of γ15c and γ12c bands) and the inverse dependence on the magnitude of the spin-orbit splitting is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semicondactors, except for materials with very strong nonparabolicity of the band of silicon type.

Keywords

Silicon Anisotropy Effective Mass Direct Dependence Heavy Hole 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Literature cited

  1. 1.
    E. O. Kane, J. Phys. Chem. Solids,1, 249 (1957).Google Scholar
  2. 2.
    A. G. Zakirova and K. Ya. Shtibel'man, in Physical Properties of AIIIBVI and AIIIBVI Semiconductors [in Russian], Baku (1967).Google Scholar
  3. 3.
    E. O. Kane, Semiconductors and Semimetals, Vol. 1, p. 75 (1966).Google Scholar
  4. 4.
    E. O. Kane, J. Phys. Chem. Solids,1, 82 (1956).Google Scholar
  5. 5.
    G. Pidgeon and S. Groves, Phys. Rev. Lett.,20, 1003 (1968).Google Scholar
  6. 6.
    G. Pidgeon and S. Groves, Phys. Rev.,186, 824 (1969).Google Scholar
  7. 7.
    K. Ya. Shtibel'man, Fiz. Tverd. Tela,5, 1 (1963).Google Scholar
  8. 8.
    A. A. Lipnik and K. Ya. Shtibel'man, Fiz. Tekhn. Poluprovodnikov,14, 1610 (1980).Google Scholar
  9. 9.
    G. Dresselhaus, A. Kip, and C. Kittel, Phys. Rev.,98, 368 (1955).Google Scholar
  10. 10.
    A. N. Khovanskii, Application of Continuous Fractions and Their Generalizations to Problems of Approximate Analysis [in Russian], Gostekhizdat, Moscow (1956).Google Scholar
  11. 11.
    P. M. Gritsyuk, K. Ya. Shtibel'man, and A. G. Prudius, Izv. Vyssh. Uchebn. Zaved., Fizika, to be published.Google Scholar
  12. 12.
    I. M. Tsidil'kovskii, Electrons and Holes in Semiconductors [in Russian], Nauka, Moscow (1972).Google Scholar
  13. 13.
    P. Lavetz, Phys. Rev.,4, 3460 (1971).Google Scholar
  14. 14.
    N. N. Berchenko, V. E. Krevs, and V. G. Sredin, Semiconducting Solid Solutions and Their Application [in Russian], Voenizdat, Moscow (1982).Google Scholar
  15. 15.
    J. A. Van Vechten, Phys. Rev.,187, 1007 (1969).Google Scholar
  16. 16.
    V. V. Sobolev, Bands and Excitons in AIIBVI Compounds [in Russian], Shtiintsa, Kishinev (1980).Google Scholar
  17. 17.
    L. Reggiani, D. Waechter, and S. Zukotynski, Phys. Rev.,B23, 3550 (1980).Google Scholar
  18. 18.
    J. Balslev and P. Lavaetz, Phys. Lett.,19, 6 (1965).Google Scholar
  19. 19.
    B. L. Gel'mont, S. B. Sultanov, and A. L. Efros, Fiz. Tekhn. Poluprovodn.,18, 2214 (1984).Google Scholar

Copyright information

© Plenum Publishing Corporation 1987

Authors and Affiliations

  • P. M. Gritsyuk
    • 1
  • K. Ya. Shtibel'man
    • 1
  • V. M. Kondratenko
    • 1
  1. 1.Chernovtsy State UniversityUSSR

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