Soviet Physics Journal

, Volume 32, Issue 1, pp 70–73 | Cite as

Switching with memory in metal-(Vanadium-molybdenum glass)-metal structures

  • V. M. Kalygina
  • V. I. Gaman
  • O. E. Modebadze
Physics of Semiconductors and Dielectrics
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Abstract

The temperature dependences of the dc and ac (102−2·104 Hz) conductivity, the dielectric constant, and the coefficient of dielectric losses were measured for four compositions of glasses in the system V2O5-MoO3-CaO. The metal-(vanadium-molybdenum glass)-metal structures exhibit switching with memory in the range 90 ≤ T ≤ 500 K. The switching parameters virtually do not depend on the temperature. For some samples an S-shaped section with negative differential resistance is observed on the volt-ampere characteristic (VAC) in the conducting state at temperatures T < 150 K.

Keywords

Dielectric Constant Dielectric Loss Metal Structure Differential Resistance Negative Differential Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 1989

Authors and Affiliations

  • V. M. Kalygina
    • 1
  • V. I. Gaman
    • 1
  • O. E. Modebadze
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical InstituteTomsk State UniversityUSSR

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