Soviet Physics Journal

, Volume 31, Issue 2, pp 118–122 | Cite as

Lifetime in compensated p-cdxHg1−xTe (x ≃0.3) crystals with deep acceptors

  • G. Garyagdyev
  • A. V. Lyubchenko
  • S. Sultanmuradov
  • D. M. Shuptar
Physics of Semiconductors and Dielectrics
Received:
  • 16 Downloads

Abstract

A complex study is made on the recombination process in p-type CdxHg1−xTe (x ≃0.3) crystals with equilibrium carrier concentrations at 77 K that are close to intrinsic. It is established that the lifetime is substantially limited by recombination through deep acceptor levels situated at 70 MeV above the v-band. An analysis is made on the statistics of Shockley-Read recombination allowing for an arbitrary level of acceptor compensation. Methods are proposed and acceptor parameters are determined: alloying depths, concentrations, and nonequilibrium charge carrier capture cross-sections.

Keywords

Recombination Charge Carrier Carrier Concentration Acceptor Level Recombination Process 
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Copyright information

© Plenum Publishing Corporation 1988

Authors and Affiliations

  • G. Garyagdyev
    • 1
  • A. V. Lyubchenko
    • 1
  • S. Sultanmuradov
    • 1
  • D. M. Shuptar
    • 1
  1. 1.Turkmen Polytechnical InstituteUSSR

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