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Liquid epitaxy growth of InP layers

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Abstract

This paper is concerned with the investigation of the process of liquid epitaxy of indium phosphide. The growth of epitaxial InP layers on (100), (111)In and (111) P oriented substrates is studied. It is shown that layers with best surface morphology are obtained on (111)In and (100) faces. The electrical parameteus of the nondoped material are preferable in layers grown on (111) In. It is shown that growth from supercooled solutions-melts leads to a considerable reduction in the thickness of the layers, an improvement in the quality of the epitaxial layer (EL) surface, and a rise in their reproducibility.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 20–23, July, 1985.

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Zakharenkov, L.F., Kuz'min, I.A., Samorukov, B.E. et al. Liquid epitaxy growth of InP layers. Soviet Physics Journal 28, 539–542 (1985). https://doi.org/10.1007/BF00896178

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Keywords

  • Indium
  • Surface Morphology
  • Epitaxial Layer
  • Considerable Reduction
  • Indium Phosphide