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Magnetic quenching of positronium in semiconductors

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Abstract

The positronium-determined characteristics of electron-positron annihilation in semiconductors in the presence of an external magnetic field are calculated. It is assumed that the positronium atoms can be in one of two states, delocalized or localized (at defects), and undergo not only pick-off annihilation but also orthoparaconversion (3S11S0) on free carriers. Numerical calculations were made for a field H=15 kG. The field has very different effects on localized and delocalized positronium, and in the first case the effect depends strongly on the nature of the defect.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No.11, pp. 75–78, November, 1980.

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Varisov, A.Z., Prokop'ev, E.P. Magnetic quenching of positronium in semiconductors. Soviet Physics Journal 23, 977–979 (1980). https://doi.org/10.1007/BF00896172

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Keywords

  • Magnetic Field
  • Numerical Calculation
  • External Magnetic Field
  • Free Carrier
  • Positronium Atom