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Applied physics

, Volume 21, Issue 4, pp 307–311 | Cite as

The characteristics of high current amorphous silicon diodes

  • R. A. Gibson
  • P. G. Le Comber
  • W. E. Spear
Contributed Papers

Abstract

Amorphous siliconpn junctions with various doping profiles have been prepared by the glow discharge technique and the effect of the barrier profile on electrical properties investigated. Current densities of up to 40 A cm−2 with rectification ratios of 104–105 were obtained withn +−ν−p + structures. The diode quality factor has also been investigated, both in the dark and under illumination.

PACS

61.40 84.60 

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References

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    See, for instance, S.M.Sze:Physics of Semiconductor Devices (Wiley-Interscience, New York 1969) Chap. 3Google Scholar

Copyright information

© Springer-Verlag 1980

Authors and Affiliations

  • R. A. Gibson
    • 1
  • P. G. Le Comber
    • 1
  • W. E. Spear
    • 1
  1. 1.Carnegie Laboratory of PhysicsUniversity of DundeeDundeeScotland

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