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Rectifier emf and short-circuit current as functions of integral neutron flux for gallium arsenide p-n junctions

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Literature cited

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    V. S. Vavilov and N. A. Ukhin, Radiation Effects in Semiconductors and Semiconductor Devices [in Russian], Atomizdat, Moscow (1969), p. 160.

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    G. E. Pikus, Principles of Semiconductor Device Theory [in Russian], Nauka, Moscow (1965), p. 352.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 149–151, February, 1973.

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Gaman, V.I., Okunev, V.D., Mamontov, A.P. et al. Rectifier emf and short-circuit current as functions of integral neutron flux for gallium arsenide p-n junctions. Soviet Physics Journal 16, 276–278 (1973). https://doi.org/10.1007/BF00892702

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Keywords

  • Gallium
  • Neutron Flux
  • Arsenide
  • Gallium Arsenide
  • Integral Neutron