Soviet Physics Journal

, Volume 25, Issue 9, pp 855–858 | Cite as

Effect of surface recombination on the amplitude spectrum of variable bias γ-counters

  • N. G. Borzunov
  • L. É. Panina
Physics of Semiconductors and Dielectrics
Received:
  • 14 Downloads

Abstract

The form of the amplitude spectrum of a photoresistive counter is found by solution of the continuity equation for an infinite semiconductive plate with an instantaneous point source of nonequilibrium charge carriers and a specified surface recombination rate for these carriers and an additional assumption as to the character of γ-quantum absorption by the photoresistor material. It is thus shown to be possible to construct the spectrum with use of the response function formalism of [1, 2] for each of the signal formation processes (e-p pair generation, photoconductivity kinetics, imposition of equipment noise).

Keywords

Charge Carrier Response Function Point Source Recombination Rate Pair Generation 
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Copyright information

© Plenum Publishing Corporation 1983

Authors and Affiliations

  • N. G. Borzunov
    • 1
  • L. É. Panina
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical InstituteTomsk State UniversityUSSR

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