Advertisement

Soviet Physics Journal

, Volume 25, Issue 9, pp 835–838 | Cite as

Electron affinity for intrinsic semiconductors

  • V. K. Nevolin
Physics of Semiconductors and Dielectrics
  • 358 Downloads

Abstract

An approach for estimating the electron affinity using the method of dielectric formalism is developed. It is shown that the volume component of the electron affinity is related to the formation of exchange-correlation holes in the valence band. The interaction of an electron with this hole on the surface is responsible for the surface component. The relation obtained agrees satisfactorily with the rather meager experimental data available for semiconductors, and enables the electron affinity to be estimated for polycrystalline semiconductors for which there is no reference data. The calculation is carried out for 14 well-known semiconductors. In the case of metals, the relations obtained give the work function of the electron, which agrees, with a relative error of up to ±30%, with experimental data for the majority of elements.

Keywords

Experimental Data Relative Error Valence Band Reference Data Work Function 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature cited

  1. 1.
    M. B. Pastenskii, Usp. Fiz. Nauk,128, 69 (1979).Google Scholar
  2. 2.
    I. Sanchez-Debesa and F. Flores, Solid State Commun.,35, 815 (1980).Google Scholar
  3. 3.
    D. Pines and P. Nozieres, Theory of Quantum Liquids, Vol. 1: Normal Fermi Liquids, W. A. Benjamin (1966).Google Scholar
  4. 4.
    C. H. Chen, A. E. Meixner, and B. M. Kincaid, Phys. Rev. Lett.,44, 951 (1980).Google Scholar
  5. 5.
    N. N. Petrov, Zh. Tekh. Fiz.41, 2473 (1971).Google Scholar
  6. 6.
    D. A. Kirzhnits, Field Methods in Many-Particle Theory [in Russian], Atomizdat, Moscow (1963).Google Scholar
  7. 7.
    D. Pines, Elementary Excitation in Solids, W. A. Benjamin (o963).Google Scholar
  8. 8.
    N. A. Levrent'ev and B. V. Shabat, Methods of the Theory of Functions of a Complex Varia- ble [in Russian], Nauaka, Moscow (1965).Google Scholar
  9. 9.
    F. Plattsman and P. Vol'f, Waves and Interactions in a Solid-State Plasma [in Russian], Mir, Moscow (1975).Google Scholar
  10. 10.
    Yu. S. Barash and V. L. Ginzburg, Usp. Fiz. Nauk,116, 5 (1975).Google Scholar
  11. 11.
    E. A. Bakulin and M. M. Bredov, Fiz. Tverd. Tela,19, 891 (1977).Google Scholar
  12. 12.
    H. B. Michaelson, J. Appl. Phys.48, 4729 (1977).Google Scholar
  13. 13.
    V. S. Fomenko and J. A. Podchernyaeva, Emission and Absorption Properties of Materials [in Russian], Atomizdat, Moscow (1975).Google Scholar

Copyright information

© Plenum Publishing Corporation 1983

Authors and Affiliations

  • V. K. Nevolin
    • 1
  1. 1.Moscow Institute of Electronic TechniquesUSSR

Personalised recommendations