Soviet Physics Journal

, Volume 25, Issue 9, pp 835–838 | Cite as

Electron affinity for intrinsic semiconductors

  • V. K. Nevolin
Physics of Semiconductors and Dielectrics


An approach for estimating the electron affinity using the method of dielectric formalism is developed. It is shown that the volume component of the electron affinity is related to the formation of exchange-correlation holes in the valence band. The interaction of an electron with this hole on the surface is responsible for the surface component. The relation obtained agrees satisfactorily with the rather meager experimental data available for semiconductors, and enables the electron affinity to be estimated for polycrystalline semiconductors for which there is no reference data. The calculation is carried out for 14 well-known semiconductors. In the case of metals, the relations obtained give the work function of the electron, which agrees, with a relative error of up to ±30%, with experimental data for the majority of elements.


Experimental Data Relative Error Valence Band Reference Data Work Function 
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Copyright information

© Plenum Publishing Corporation 1983

Authors and Affiliations

  • V. K. Nevolin
    • 1
  1. 1.Moscow Institute of Electronic TechniquesUSSR

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