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Impurity photoconductivity in epitaxial layers of gallium arsenide

Abstract

Impurity photoconductivity spectra in the range 0.5–1.5 eV are studied in epitaxial layers of n-GaAs grown on substrates of semiconductive GaAs withρ > 106 Ω·cm in the system Ga-AsCl3 -H2. The effect of uncontrolled acceptor impurities on the impurity photoconductivity spectrum is evaluated.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 19–23, November, 1974.

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Lisenker, B.S., Lisinker, S.S., Maronchuk, Y.E. et al. Impurity photoconductivity in epitaxial layers of gallium arsenide. Soviet Physics Journal 17, 1491–1494 (1974). https://doi.org/10.1007/BF00891097

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Keywords

  • GaAs
  • Gallium
  • Epitaxial Layer
  • Arsenide
  • Gallium Arsenide