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Applied physics

, Volume 2, Issue 5, pp 247–256 | Cite as

Ionized impurity scattering in degenerate In2O3

  • Robert Clanget
Contributed Papers

Abstract

Thin films of In2O3 are prepared by the spraying method. The concentration of charge carriers is changed from about 8×1019 cm−3 to 5×1020 cm−3 by suitable doping with Sn. The optical effective mass is found to depend slightly on carrier concentration. Electrical and optical measurements indicate that electrons are scattered predominantly by charged impurity centres. Structural investigations show that grain boundary scattering can be neglected. The interpretation of the experimental results is mainly based on a paper by von Baltz and Escher, where analytical formulas for the imaginary part of the complex dielectric constant are given for the most important scattering mechanisms in (degenerate) semiconductors.

Index Headings

Ionized impurity scattering In2O3-films 

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Copyright information

© Springer-Verlag 1973

Authors and Affiliations

  • Robert Clanget
    • 1
  1. 1.ExperimentalphysikUniversität des SaarlandesSaarbrückenFed. Rep. Germany

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