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Temperature dependence of hole saturation velocity in silicon

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Abstract

Thep + np + diode is used to determine the hole drift velocity versus field curves in silicon as a function of temperature. By taking the analytical expression of the hole drift velocity,v=v m (E/E c )/(1+E/E c ),v m andE c are obtained in the temperature range from 210–420 K.v m varies from 1.04×107 cm/sec at 210 K to 1.11×107 cm/sec at 420 K, whileE c increases from 1.05×104 V/cm at 210 K to 5.3×104 V/cm at 420 K. The curve at 300 K is very close to the result of Norris and Gibbons.

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Additional information

This work was supported by the Grant-in-aid for Scientific Research from the Ministry of Education, Japan.

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Ikoma, T., Hara, K. Temperature dependence of hole saturation velocity in silicon. Appl. Phys. 3, 431–432 (1974). https://doi.org/10.1007/BF00885852

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Index Headings

  • Hole drift velocity
  • Temperature dependence
  • Punch-through diode