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Hf-sputtered indium oxide films doped with tin

I. Dependence of the electronic transport on the composition of the sputter gas and on the oxidation of the surface


Indium oxide films doped with tin (ITO-films) have been hf-sputtered from an 80 at-%In2O3/20 at-%SnO2 target onto glass substrates. The sputter atmosphere contained mainly argon (10−2Torr) with addition of oxygen (0≦p O 2≦2·10−2Torr). The sputtered films aren-conductors. The conductivity and density of charge carriers depend on the oxygen content of the sputter gas. They could be varied by two orders of magnitude. In air or in oxygen atmosphere the films oxidize at the surface and for a certain depth beneath the surface, thus decreasing the conductivity. The Hall mobility of the sputtered films is smaller (≈10 cm2V−1 s−1) than one observes at ITO films produced by CVD sparaying or other methods. The conductivity of as sputtered films approached maximum values of about 1000Ώ−1cm−1.

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Hoffmann, H., Pickl, J., Schmidt, M. et al. Hf-sputtered indium oxide films doped with tin. Appl. Phys. 16, 239–246 (1978).

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