Applied physics

, Volume 14, Issue 3, pp 255–268 | Cite as

Modulation behavior of semiconductor injection lasers

  • G. Arnold
  • P. Russer
Invited Papers
Received:
Accepted:

Abstract

GaAs double heterostructure semiconductor injection lasers which now exhibit more than 25000 h cw room temperature lifetime are of great interest for future use as directly modulated transmitters for high bit-rate fiber optical communications. The effects limiting this application are modulation distortions, spectral width and additional spectral broadening in the case of modulation and spontaneous fluctuations of the output power. The dynamic and spectral behavior of injection lasers, the methods of high bit-rate modulation and the improvement of the high bit-rate modulation capability by coupling two lasers are discussed.

PACS Codes

42.80 42.55 85.60 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    M. Boerner: Wiss. Ber. AEG-Telefunken44, 41–45 (1971)Google Scholar
  2. 2.
    M. Boerner, S. Maslowski: Proc. IEE123, 627–632 (1976)Google Scholar
  3. 3.
    E. Weidel: Electron. Lett.11, 436–437 (1975)ADSGoogle Scholar
  4. 4.
    D. Gloge: Appl. Opt.10, 2442–2445 (1974)ADSGoogle Scholar
  5. 5.
    D. Gloge: Appl. Opt.13, 249–254 (1974)ADSGoogle Scholar
  6. 6.
    R. L. Hartman, R. W. Dixon: Appl. Phys. Lett.26, 239–242 (1975)CrossRefADSGoogle Scholar
  7. 7.
    H. Kressel: Proc. Opt. Fibre Transm. Conf. II (Williamsburg Feb. 1977)Google Scholar
  8. 8.
    C. H. Gooch: GaAsLasers (Wiley Interscience, London 1969)Google Scholar
  9. 9.
    L. A. D'Asaro: J. Luminescence7, 310–337 (1973)CrossRefGoogle Scholar
  10. 10.
    M. B. Panish, I. Hayashi: Appl. Solid State Sci.4, 236–328 (1974)Google Scholar
  11. 11.
    I. Hayashi: Appl. Phys.5, 25–36 (1974)CrossRefADSGoogle Scholar
  12. 12.
    M. B. Panish: Proc. IEEE64, 1512–1540 (1976)ADSGoogle Scholar
  13. 13.
    J. H. Hsieh, J. A. Rossi, J. P. Donelly: Appl. Phys. Lett.28, 709–711 (1976)CrossRefADSGoogle Scholar
  14. 14.
    J. H. Hsieh: Proc. AGARD Conf. pp. 35/1–35/3 (London May 1977)Google Scholar
  15. 15.
    E. Haken, H. Haken: Z. Physik176 421–428 (1963)CrossRefGoogle Scholar
  16. 16.
    G. J. Lasher: Solid-State Electr.7, 707–716 (1964)CrossRefGoogle Scholar
  17. 17.
    J. Vilms, L. Wandinger, K. L. Klohn: IEEE J. Quant. Electr. QE-2, 80–83 (1966)CrossRefGoogle Scholar
  18. 18.
    H. Haug: Z. Physik194, 482–506 (1966)CrossRefGoogle Scholar
  19. 19.
    H. Haug: Z. Physik200, 57–68 (1967)CrossRefGoogle Scholar
  20. 20.
    M. J. Adams, P. T. Landsberg: Ref. 8, pp. 5–79Google Scholar
  21. 21.
    H. Haug: Phys. Rev.184 338–348 (1969)CrossRefADSGoogle Scholar
  22. 22.
    M. J. Adams: Opto-Electronics5, 201–215 (1973)CrossRefGoogle Scholar
  23. 23.
    H. Statz, C. L. Tang, J. M. Lavine: J. Appl. Phys.35, 2581–2585 (1964)CrossRefGoogle Scholar
  24. 24.
    H. Haug: Z. Physik195, 74–97 (1966)CrossRefGoogle Scholar
  25. 25.
    J. Buus, M. Danielsen, P. Jeppesen, F. Mengel, H. Moeskjaer, V. Ostoich: Proc. 2nd Europ. Conf. Opt. Commun. Paris (Sept. 1976) pp. 231–239Google Scholar
  26. 26.
    G. Lasher, F. Stern: Phys. Rev.133, A553-A563 (1964)CrossRefADSGoogle Scholar
  27. 27.
    H. C. Casey, Jr., F. Stern: J. Appl. Phys.47, 631–643 (1976)CrossRefADSGoogle Scholar
  28. 28.
    F. Marinclli: Solid-State Electr.8, 939–942 (1965)CrossRefGoogle Scholar
  29. 29.
    T. H. Zachos, J. E. Ripper: IEEE J. Quant. Electr. QE-5, 29–39 (1969)CrossRefGoogle Scholar
  30. 30.
    H. C. Casey, Jr., B. I. Miller, E. Pinkas: J. Appl. Phys.44, 1281–1287 (1973)CrossRefADSGoogle Scholar
  31. 31.
    S. N. Biswas, N. Kumar: Indian J. Pure Appl. Phys.11, 855–856 (1973)Google Scholar
  32. 32.
    J. C. Dyment, J. E. Ripper, T. P. Lee: J. Appl. Phys.43, 452–457 (1972)CrossRefADSGoogle Scholar
  33. 33.
    J. Angerstein, D. Siemsen: Arch. Elektron. Übertragungstech.30, 477–480 (1976)ADSGoogle Scholar
  34. 34.
    K. Konnerth, C. Lanza: Appl. Phys. Lett.4, 120–121 (1964)CrossRefGoogle Scholar
  35. 35.
    R. Roldan: Appl. Phys. Lett.11, 346–348 (1967)CrossRefGoogle Scholar
  36. 36.
    D. A. Kleinman: Bell Syst. Tech. J.43, 1505–1532 (1964)Google Scholar
  37. 37.
    D. Röss: Z. Naturforschg.19a, 1169–1177 (1964)Google Scholar
  38. 38.
    T. Ikegami, K. Kobayashi, Y. Suematsu: Electron. Commun. Jap.53-B, 82–89 (1970)Google Scholar
  39. 39.
    P. M. Boers, M. T. Vlaardingerbrook, M. Danielsen: Electron Lett.11, 206–208 (1975)ADSGoogle Scholar
  40. 40.
    T. Ozeki, T. Ito: IEEE J. Quant. Electr. QE-9, 388–391 (1973)CrossRefGoogle Scholar
  41. 41.
    T. Ozeki, T. Ito: IEEE J. Quant. Electr. QE-9, 1098–1101 (1973)CrossRefGoogle Scholar
  42. 42.
    T. P. Lee, R. M. Derosier: Proc. IEEE62, 1176–1177 (1974)Google Scholar
  43. 43.
    W. Harth, D. Siemsen: Arch. Elektron. Übertragungstech.30, 343–348 (1976)ADSGoogle Scholar
  44. 44.
    T. Kobayashi, S. Takahashi: Japan J. Appl. Phys.15, 2025–2026 (1976)CrossRefADSGoogle Scholar
  45. 45.
    M. Chown, A. R. Goodwin, D. F. Lovelace, G. H. B. Thompson, P. R. Selway: Electron. Lett.9, 34–36 (1973)CrossRefGoogle Scholar
  46. 46.
    H. W. Thim, L. R. Dawson, J. V. Di Lorenzo, J. C. Dyment, C. J. Hwang, D. L. Rode: 1973, Int. Solid-State circuits Conf. Digest of Technical Papers (1973) pp. 92–93Google Scholar
  47. 47.
    P. Russer, S. Schulz: Arch. Elektron. Übertragungstech.27, 193–195 (1973)Google Scholar
  48. 48.
    D. Schicketanz: Siemens Forsch.- und Entw. Ber.2, 218–221 (1973)Google Scholar
  49. 49.
    H. Yanai, M. Yano, T. Kamiya: IEEE J. Quant. Electr. Qu-11, 519–524 (1975)CrossRefADSGoogle Scholar
  50. 50.
    P. Marten, to be publishedGoogle Scholar
  51. 51.
    M. Danielsen: IEEE J. Quant. Electr. QE-12, 657–660 (1976)CrossRefADSGoogle Scholar
  52. 52.
    T. Ikegami, Y. Suematsu: Electron. Commun. Japan.51, 51–57 (1968)Google Scholar
  53. 53.
    T. Ikegami, Y. Suematsu: Proc. IEEE55, 122–123 (1967)Google Scholar
  54. 54.
    F. L. Paoli, J. E. Ripper: Proc. IEEE58, 1457–1465 (1970)Google Scholar
  55. 55.
    T. Ikegami, Y. Suematsu: Electron. Commun. Japan53-B, 69–75 (1970)Google Scholar
  56. 56.
    W. Harth: Electron. Lett.9, 532–533 (1973)CrossRefGoogle Scholar
  57. 57.
    W. Harth, D. Siemsen: Arch. Elektron. Übertragungstechn.28, 391–392 (1974)Google Scholar
  58. 58.
    P. Russer, H. Hillbrand, W. Harth: Electron. Lett.11, 87–89 (1975)ADSGoogle Scholar
  59. 59.
    H. Grothe, W. Harth, P. Russer: Electron. Lett.12, 522–524 (1976)ADSGoogle Scholar
  60. 60.
    S. Iida, Y. Watanabe: Jap. J. Appl. Phys.13, 1249–1258 (1974)CrossRefGoogle Scholar
  61. 61.
    J. F. Ripper, F. D. Nunes, N. B. Patel: Appl. Phys. Lett.27, 328–330 (1975)CrossRefADSGoogle Scholar
  62. 62.
    B. W. Hakki: IEEE J. Quant. Electr. QE-11, 149–154 (1975)CrossRefADSGoogle Scholar
  63. 63.
    T. L. Paoli: IEEE J. Quant. Electr. QE-12, 770–776 (1976)CrossRefADSGoogle Scholar
  64. 64.
    C. H. Gooch:Injection Electroluminescent Devices (Wiley, London 1973) pp. 138–142Google Scholar
  65. 65.
    T. L. Paoli, P. A. Barnes: Appl. Phys. Lett.28, 714–716 (1976)CrossRefADSGoogle Scholar
  66. 66.
    R. W. Dixon, F. R. Nash, R. L. Hartman, R. T. Happlewhite: Appl. Phys. Lett.29, 372–374 (1976)CrossRefADSGoogle Scholar
  67. 67.
    K. Kobayashi, R. Lang, H. Yonezu, J. Sakuma, I. Hayashi: Jap. J. Appl. Phys.16, 207–208 (1977)CrossRefGoogle Scholar
  68. 68.
    T. L. Paoli, J. E. Ripper: Phys. Rev. Lett.22, 1085–1088 (1969)CrossRefADSGoogle Scholar
  69. 69.
    T. Ikegami: Proc. 1st European Conf. Opt. Commun. London (Sept. 1975) pp. 111–113Google Scholar
  70. 70.
    D. Siemsen, J. Angerstein: Electron. Lett.12, 432–434 (1976)ADSGoogle Scholar
  71. 71.
    P. R. Selway, A. R. Goodwin: Electron. Lett.12, 25–26 (1976)ADSGoogle Scholar
  72. 72.
    W. Freude: University Karlsruhe, reported at the DFG-meeting “Optical Communication” (March 1977, Berlin) single-mode emission of an injection laser, directly modulated at 264 Mbit/sGoogle Scholar
  73. 73.
    N. G. Basov, V. N. Morozov, V. V. Nikitin, A. S. Semenov: Sov. Phys. Semicond.1, 1305–1308 (1968)Google Scholar
  74. 74.
    T. P. Lee, R. Roldan: IEEE J. Quant. Electron. QE-5, 551–552 (1969)CrossRefGoogle Scholar
  75. 75.
    T. L. Paoli, J. E. Ripper: Appl. Phys. Lett.18, 466–468 (1971)CrossRefGoogle Scholar
  76. 76.
    N. Chinone, R. Ito: Japan. J. Appl. Phys.13, 575–576 (1974)CrossRefGoogle Scholar
  77. 77.
    T. L. Paoli: IEEE J. Quant. Electron. QE-13, 351–359 (1977)CrossRefADSGoogle Scholar
  78. 78.
    N. G. Basov: IEEE J. Quant. Electron. QE-4, 855–864 (1968)CrossRefGoogle Scholar
  79. 79.
    K. Kobayashi: IEEE J. Quant. Electron. QE-9, 449–457 (1973)CrossRefGoogle Scholar
  80. 80.
    H.-G. Wöhrstein, H. Haken: IEEE J. Quant. Electron. QE-9, 318–323 (1973)CrossRefGoogle Scholar
  81. 81.
    J. E. Ripper, T. L. Paoli: IEEE J. Quant. Electron. QE-8, 74–79 (1972)CrossRefGoogle Scholar
  82. 82.
    G. Arnold, K. Petermann: Self-pulsing phenomena in injection lasers (to be published)Google Scholar
  83. 83.
    A. B. Fowler: J. Appl. Phys.35, 2275–2276 (1964)CrossRefGoogle Scholar
  84. 84.
    P. Russer: Arch. Electron. Übertragungstech.29, 231–232 (1975)Google Scholar
  85. 85.
    P. Russer: Laser 75 Optoelectron. Conf. Proc. München (May 1975) pp. 161–164Google Scholar
  86. 86.
    H. Hillbrand, P. Russer: Electron. Lett.11, 372–374 (1975)ADSGoogle Scholar
  87. 87.
    R. Lang, K. Kobayashi: IEEE J. Quant. Electron. QE-11, 60D (1975)CrossRefGoogle Scholar
  88. 88.
    K. Kobayashi, R. Lang, K. Minemura: Proc. 1st European Conf. Opt. Commun. London (Sept. 1975) pp. 138–140Google Scholar
  89. 89.
    R. Lang, K. Kobayashi: IEEE J. Quant. Electron.12, 194–199 (1976)CrossRefADSGoogle Scholar
  90. 90.
    P. Russer, G. Arnold, K. Petermann: High-speed modulation of DHS lasers in the case of coherent light injection (to be published in Proc. 3rd European Conf. on Opt. Commun., München, Sept. 1977)Google Scholar
  91. 91.
    R. Salathé, C. Voumard, H. Weber: Phys. Stat. Sol. (a)23, 675–682 (1974)CrossRefGoogle Scholar
  92. 92.
    J.-I. Nishizawa, K. Ishida: IEEE J. Quant. Electron. QE-11, 515–519 (1975)CrossRefADSGoogle Scholar
  93. 93.
    M. Nakamura, K. Aiki, J. Umeda, A. Yariv: Appl. Phys. Lett.27, 403–405 (1975)CrossRefADSGoogle Scholar
  94. 94.
    S. R. Chinn: Opt. Commun.19, 208–211 (1976)CrossRefADSGoogle Scholar
  95. 95.
    H. Namizaki: IEEE J. Quant. Electron. QE-11, 427–431 (1975)CrossRefADSGoogle Scholar
  96. 95a.
    H. Namizaki: Trans. IECE of Japan, E.59, 8 (1976)Google Scholar
  97. 96.
    T. Tamir: Integrated Optics (Springer, Berlin, Heidelberg, New York 1975)Google Scholar
  98. 97.
    D. N. Payne, W. A. Gambling: Electron. Lett.11, 176–178 (1975)Google Scholar

Copyright information

© Springer-Verlag 1977

Authors and Affiliations

  • G. Arnold
    • 1
  • P. Russer
    • 1
  1. 1.ForschungsinstitutAEG-TelefunkenUlmFed. Rep. Germany

Personalised recommendations