Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Numerical analysis of the transport phenomenon in semiconductor devices and structures. 5. Three-dimensional modeling of VLIS elements

  • 17 Accesses

Abstract

The high efficiency of a multidimensional numerical analysis of semiconductor devices is confirmed in an example of three-dimensional modeling of bipolar integral circuit structures.

This is a preview of subscription content, log in to check access.

Literature cited

  1. 1.

    G. G. Kazennov, V. Ya. Kremlev, and M. L. Khachaturov, Electronic Engineering [in Russian], Ser. 3, Microelectronics, No. 6, 41–48 (1981).

  2. 2.

    B. V. Batalov and I. P. Norenkov, Mikroelektronika,9, No. 5, 401–412 (1980).

  3. 3.

    I. I. Abramov and V. V. Kharitonov, Inzh.-Fiz. Zh.,44, No. 2, 294–293 (1983).

  4. 4.

    I. I. Abramov and V. V. Kharitonov, Inzh. Fiz. Zh.,44, No. 3, 474–480 (1983).

  5. 5.

    I. I. Abramov and V. V. Kharitonov, Inzh.-Fiz. Zh.,50, No. 5, 845–852 (1986).

  6. 6.

    I. I. Abramov and V. V. Kharitonov, Inzh.-Fiz. Zh.,51, No. 1, 136–143 (1986).

  7. 7.

    I. I. Abramov, Izv. Vyssh. Uchebn. Zaved., Radioelektron.,27, No. 8, 16–22 (1984).

  8. 8.

    W. L. Engl, H. K. Dirks, and B. Meinerzhagen, PIEEE,71, 10–23 (1983).

  9. 9.

    A. A. Samarskii, Theory of Difference Schemes [in Russian], Moscow (1983).

  10. 10.

    G. I. Marchuk, Methods of Computational Mathematics [in Russian], Moscow (1977).

  11. 11.

    T. W. Slotboom, IEEE Trans.,ED-20, No. 8, 669–679 (1973).

  12. 12.

    I. I. Abramov, Izv. Vyssh. Uchebn. Zaved., Radioelektron.,28, No. 11, 63–69 (1985).

  13. 13.

    I. I. Abramov, Izv. Vyssh. Uchebn. Zaved., Radioelektron.,27, No. 6, 107–109 (1984).

  14. 14.

    I. I. Abramov and V. V. Kharitonov, Izv. Vyssh. Uchebn. Zaved., Radioelektron.,28, No. 12, 82–85 (1985).

  15. 15.

    E. V. Avdeev, A. P. Kotko, Yu. N. Mirgorodskii, et al., Microelectronics and Semiconductor Devices [in Russian], No. 9, 99–111 (1984).

  16. 16.

    I. I. Abramov and S. G. Mulyarchik, Izv. Vyssh. Uchebn. Zaved., Radioelektron.,24, No. 6, 59–67 (1981).

  17. 17.

    I. I. Abramov, “Modeling of bipolar IC elements on the basis of a discrete physicotopological model,” Candidate's Dissertation, Minsk (1982).

Download references

Author information

Additional information

Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 1, pp. 135–141, July, 1987.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Abramov, I.I., Kharitonov, V.V. Numerical analysis of the transport phenomenon in semiconductor devices and structures. 5. Three-dimensional modeling of VLIS elements. Journal of Engineering Physics 53, 849–854 (1987). https://doi.org/10.1007/BF00874052

Download citation

Keywords

  • Statistical Physic
  • Transport Phenomenon
  • Semiconductor Device
  • Circuit Structure
  • Integral Circuit