Capacity and resistance of a germanium-type semiconductor-electrolyte contact
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Summary
- 1.
An expression was obtained for the impedance of the contact of an n-type semiconductor with an electrolyte, taking into account the displacement current and the current of the electrode reaction.
- 2.
The resistance and capacity of the contact begin to depend on the frequency only at frequencies comparable with the frequency of generation and recombination of electrons and holes in the semiconductor.
Keywords
Recombination Electrode Reaction Displacement Current
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Literature cited
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