Soviet Physics Journal

, Volume 9, Issue 3, pp 45–48 | Cite as

Galvanomagnetic and thermomagnetic effects in compensated gallium arsenide

  • A. F. Kravchenko
Article
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Abstract

The kinetic effects:-Hall effect, magnetoresistance, and Nernst-Ettinghausen effect-are examined in n-type gallium arsenide having a free electron concentration at room temperature of less than 1015 cm−3.

The work was directed toward determining the dominating scattering mechanism in compensated material.

At low temperatures the scattering is predominately by impurity atoms and optical vibrations (optical phonons); at high temperatures, by acoustic phonons.

With simultaneous scattering by thermal vibrations and impurity ions, for temperatures T > 300 ° K, the second mechanism plays the basic role in the longitudinal Nernst-Ettinghausen effect.

Keywords

Gallium Electron Concentration Free Electron Hall Effect Impurity Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© The Faraday Press, Inc. 1969

Authors and Affiliations

  • A. F. Kravchenko
    • 1
  1. 1.Institute of Semiconductor Physics, Siberian DivisionAS USSRUSSR

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