Parameters of alloy p-n junctions in Cu2O
- 23 Downloads
The p-n junctions are made by melting copper on single-crystal Cu2O plates. A change in specific resistance of the Cu2O from 2.8 × 102 to 1.15 × 105 ohm-cm causes the reverse voltage at a reverse-current density of 2 m A/cm2 to increase from 15 to 500 V, while the forward current density at 2 V decreases from 250 to 2 mA/cm2.
Unable to display preview. Download preview PDF.
- 1.V. I. Zhuze B. V. Kurchatov ZhETF 2 5–6 309 1932.Google Scholar
- 2.K. S. Toth, R. Kilkson and D. Trivich, J. Appl. Phys.31, 6, 1117, 1960.Google Scholar
- 3.P. A. Kotsyumakha, Ya. I. Kushnir, and A. V. Perelygin, Crystal Growth [in Russian], 6, 244, 1965.Google Scholar
- 4.P. A. Kotsyumakha, Ya. I. Kushnir, and A. V. Perelygin, Izv. AN SSSR, ser. fiz.,28, 8, 1328, 1964.Google Scholar
- 5.R. A. Gorain, Structure and Rectification Parameters of Cu2O in Relation to Previous Vacuum Heat Treatment of the Copper [in Russian], L'vov, 1958.Google Scholar