Germanium selective solar absorber surfaces
- Cite this article as:
- Thogersen, P.P., Cocks, F.H., Pollock, J.T.A. et al. J Mater Sci (1982) 17: 1377. doi:10.1007/BF00752249
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Thin Ge films, produced by evaporation through 0.3, 1 and 3 torr pressures of argon onto polished aluminum substrates were found to exhibit selective absorption behaviour. Maximum absorptance to emittance ratios of 13∶1 were measured, with values of 8∶1 for films having solar absorptances of 0,9. Film structures were significant in determining collection efficiency. Films deposited at 0.3 torr showed better overall properties due to a larger particle size of about 1 μm compared with an approximate 0.1 μm size measured with films deposited at 1 and 3 torr.