Study of AuAgFe/AlGaAs Schottky diodes fabricated byin situ molecular beam epitaxy

  • Y. H. Wang
  • M. P. Houng
  • F. H. Chen
  • P. W. Sze
  • M. Hong
  • J. P. Mannaerts
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Abstract

This study investigated single magnetic crystal Au/Ag/Fe layers directly grown (in situ) on (001) Al x Ga1 −x As Schottky diodes by molecular beam epitaxy. The barrier height was found to increase with increasing Al content to a maximum of 0.934 eV for Au/Ag/Fe/AlAs, which can endure the highest operational temperatures. Annealing caused interdiffusion and the formation of some compound phases. Results of current-voltage (I-V) and capacitance-voltage (C-V) measurements revealed that increasing the doping concentration with increasing annealing temperature causes the Au/Ag/Fe/Al x Ga1 −xAs effective barrier height to decrease. The mechanisms are discussed.

Keywords

Electronic Material Operational Temperature Barrier Height Doping Concentration Molecular Beam Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Chapman & Hall 1992

Authors and Affiliations

  • Y. H. Wang
    • 1
  • M. P. Houng
    • 1
  • F. H. Chen
    • 1
  • P. W. Sze
    • 1
  • M. Hong
    • 2
  • J. P. Mannaerts
    • 2
  1. 1.Department of Electrical EngineeringNational Cheng Kung UniversityTainanTaiwan
  2. 2.AT & T Bell LaboratoriesMurray HillUSA

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