Applied Physics B

, Volume 44, Issue 3, pp 151–153 | Cite as

Relations between theT0 values of bulk and quantum-well GaAs

Contributed Papers


A simple calculation of the threshold current densityJth of quantum-well and bulk GaAs lasers shows that it is proportional to the temperatureT in the first case and toT3/2 in the second case. As a consequence theT0 value of quantum-well GaAs is 3/2 times larger than for the bulk material. Moreover, we get a further doubling ofT0 for a one-dimensional quantum-well wire. These results are independent on the magnitude ofJth and hold also for other laser materials, provided that the Auger recombination is negligible as in GaAs.


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Copyright information

© Springer-Verlag 1987

Authors and Affiliations

  • A. Haug
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany
  2. 2.TraunsteinGermany

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