Applied Physics B

, Volume 44, Issue 3, pp 151–153 | Cite as

Relations between theT0 values of bulk and quantum-well GaAs

Contributed Papers

Abstract

A simple calculation of the threshold current densityJth of quantum-well and bulk GaAs lasers shows that it is proportional to the temperatureT in the first case and toT3/2 in the second case. As a consequence theT0 value of quantum-well GaAs is 3/2 times larger than for the bulk material. Moreover, we get a further doubling ofT0 for a one-dimensional quantum-well wire. These results are independent on the magnitude ofJth and hold also for other laser materials, provided that the Auger recombination is negligible as in GaAs.

PACS

42.55 P 

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References

  1. 1.
    Y. Horikoshi: In GaInAsP Alloy Semiconductors, ed. by T.P. Pearsall (Wiley, New York 1982)Google Scholar
  2. 2.
    K. Hess, B.A. Vojak, N. Holonyak, R. Chin, P.D. Dapkus: Solid-State Electron.23, 585 (1980)Google Scholar
  3. 3.
    Y. Arakawa, H. Sakaki: Appl. Phys. Lett.40, 939 (1982)Google Scholar
  4. 4.
    G. Weimann, W. Schlapp: Physica129B, 459 (1985)Google Scholar
  5. 5.
    E. Zielinski, H. Schweizer, S. Hausser, R. Stuber, M.H. Pilkuhn, G. Weimann: IEEE J. QE-23, 969 (1987)Google Scholar
  6. 6.
    A. Haug: IEEE J. QE-21, 716 (1985)Google Scholar
  7. 7.
    A.P. Mozer, S. Hausser, M.H. Pilkuhn: IEEE J. QE-21, 719 (1985)Google Scholar
  8. 8.
    A. Haug: J. Phys. C16, 4159 (1983)Google Scholar
  9. 9.
    W.B. Joyce, R.W. Dixon: Appl. Phys. Lett.31, 354 (1977)Google Scholar
  10. 10.
    G. Lasher, F. Stern: Phys. Rev.133, A 553 (1964)Google Scholar
  11. 11.
    P. Lawaetz: Phys. Rev. B4, 3460 (1971)Google Scholar
  12. 12.
    N.K. Dutta: J. Appl. Phys.54, 1236 (1983)Google Scholar
  13. 13.
    A. Haug: J. Phys. C17, 6191 (1984)Google Scholar
  14. 14.
    N.K. Dutta, R.J. Nelson: J. Appl. Phys.53, 74 (1982)Google Scholar
  15. 15.
    A. Sugimura: J. Appl. Phys.51, 4405 (1980)Google Scholar
  16. 16.
    R. Olshansky, C.B. Su, J. Manning, W. Powazinik: IEEE J. QE-20, 838 (1984)Google Scholar
  17. 17.
    W.T. Tsang: Appl. Phys. Lett.39, 786 (1981)Google Scholar

Copyright information

© Springer-Verlag 1987

Authors and Affiliations

  • A. Haug
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany
  2. 2.TraunsteinGermany

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