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Sulphur diffusion in GaAs-AlAs superlattices


Diffusion and heat treatment experiments in closed ampoules were carried out on two different molecular beam epitaxy-grown GaAs-AlAs superlattice wafers. All of the diffusion experiments were undertaken at 1000° C. The effects of varying the As and S vapour pressures as well as the diffusion time were investigated. Angle-lapping, transmission electron microscopy, X-ray photoelectron spectroscopy and secondary-ion mass spectroscopy were the techniques employed to analyse the samples. It was demonstrated that the diffusion of S enhances the group III interdiffusion or ‘intermixing’ compared with the effect of plain heat treatment. It was also shown that S-induced intermixing has two origins, one being the diffusion of S and its effects on the concentration of native defects and the other being a mechanism related to the formation of a coating on the semiconductor surface during the diffusion.

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Baba-Ali, N., Harrison, I., Tuck, B. et al. Sulphur diffusion in GaAs-AlAs superlattices. Opt Quant Electron 23, S813–S821 (1991).

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  • Spectroscopy
  • Electron Microscopy
  • Mass Spectroscopy
  • Transmission Electron Microscopy
  • Heat Treatment