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Temperature and concentration dependence of epitaxial growth rate in Sb and Ga implanted Si

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Abstract

The epitaxial growth rate of Si(100) implanted with several doses of Sb or Ga has been measured at 480 and 500 °C by channeling-effect technique. The growth rate at each temperature is constant up to a given concentration, and then it increases almost abruptly as the dopant concentration increases. This critical concentration is 8×1019 and 1.8×1020 at./cm3 for Sb at 480 and 500 °C, respectively, whilst for Ga it is ∼ 1.5×1020 at./cm3 for both temperatures. These results cannot be simply explained within the known models of epitaxial rate enhancement due to dopant addition, thus pointing out the need for more extensive measurements and more realistic descriptions.

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visiting scientist on the basis of the INFN-Academia Sinica cultural exchange plan

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Campisano, S.U., Chang, C.T. Temperature and concentration dependence of epitaxial growth rate in Sb and Ga implanted Si. Appl. Phys. A 31, 157–160 (1983). https://doi.org/10.1007/BF00624722

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PACS

  • 61.70 Tm 81.40