Springer Nature is making SARS-CoV-2 and COVID-19 research free. View research | View latest news | Sign up for updates

Temperature and concentration dependence of epitaxial growth rate in Sb and Ga implanted Si

  • 34 Accesses

  • 8 Citations


The epitaxial growth rate of Si(100) implanted with several doses of Sb or Ga has been measured at 480 and 500 °C by channeling-effect technique. The growth rate at each temperature is constant up to a given concentration, and then it increases almost abruptly as the dopant concentration increases. This critical concentration is 8×1019 and 1.8×1020 at./cm3 for Sb at 480 and 500 °C, respectively, whilst for Ga it is ∼ 1.5×1020 at./cm3 for both temperatures. These results cannot be simply explained within the known models of epitaxial rate enhancement due to dopant addition, thus pointing out the need for more extensive measurements and more realistic descriptions.

This is a preview of subscription content, log in to check access.


  1. 1.

    L. Csepregi, J.M. Mayer, T.W. Sigmon: Phys. Lett. A54, 157 (1975)

  2. 2.

    L. Csepregi, E.F. Kennedy, T.J. Gallagher, J.W. Mayer, T.W. Sigmon: J. Appl. Phys.48, 4234 (1977)

  3. 3.

    E.F. Kennedy, L. Csepregi, J.W. Mayer, T.W. Sigmon: J. Appl. Phys.48, 4241 (1977)

  4. 4.

    S.U. Campisano, E. Barbarino: Appl. Phys.25, 153 (1981)

  5. 5.

    J.S. Williams, R.G. Elliman: Appl. Phys. Lett.40, 266 (1982)

  6. 6.

    J. Fletcher, J. Narajan, O.W. Holland: Inst. Phys. Conf. Ser. No. 60, 295 (1981)

  7. 7.

    I. Suni, G. Goltz, M.G. Grimaldi, M.A. Nicolet, S.S. Lau: Appl. Phys. Lett.40, 269 (1982)

  8. 8.

    S.U. Campisano: Appl. Phys. A29, 147 (1982)

  9. 9.

    J.S. Williams, K.T. Short: Proc. Intern. Conf. Ion Beam Modification of Material (1982), Nucl. Instrum. Methods (to be published)

  10. 10.

    S.U. Campisano, E. Rimini, P. Baeri, G. Foti: Appl. Phys. Lett.37, 170 (1980)

  11. 11.

    S.U. Campisano, G. Foti, P. Baeri, M.G. Grimaldi, E. Rimini: Appl. Phys. Lett.37, 719 (1980)

  12. 12.

    J.S. Williams, K.T. Short: InMetastable Materials Production by Ion Implantation, ed. by A. Choyke and S.T. Picraux (North-Holland, Amsterdam 1982)

Download references

Author information

Additional information

visiting scientist on the basis of the INFN-Academia Sinica cultural exchange plan

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Campisano, S.U., Chang, C.T. Temperature and concentration dependence of epitaxial growth rate in Sb and Ga implanted Si. Appl. Phys. A 31, 157–160 (1983). https://doi.org/10.1007/BF00624722

Download citation


  • 61.70 Tm 81.40