Etude des possibilités limites d'une méthode de champ proche appliquée à la détermination de la loi de luminanceL(P) d'une source semi-conductrice
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Abstract
This paper presents a theoretical and experimental study of the application of the near-field technique to the measurement of local radiance in small area semi-conductor sources. It is devoted to a description of the causes of broadening, and of the conditions needed to obtain the best near-field distribution. We examine the influence of the radius of the detector diaphragm, of the magnification used and of the modulation transfer function of the system.
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© Chapman and Hall Ltd 1984