Applied Physics A

, Volume 28, Issue 4, pp 241–245 | Cite as

Laser-induced oxidation of the Si(111) surface

  • A. Cros
  • F. Salvan
  • J. Derrien
Contributed Papers


Pulsed laser induced oxidation of clean Si(111) surfaces has been studied by Auger electron spectroscopy and electron energy loss spectroscopy. The short duration time of the pulse has allowed a precise investigation of the first stages of the oxidation. About 1–2 oxide monolayers first grow in less than 10 μs. Their stoichiometry evolves from SiOx towards SiO2 with increasing beam energy densities. Once this superficial layer has formed, no evolution is seen with further irradiation, suggesting that oxygen diffusion during the pulse duration cannot sustain the oxide growth.


81.60.-j 68.55. +h 82.80.Pv 


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  1. 1.
    D.H.Auston, C.M.Surko, T.N.C.Venkatesan, R.E.Slusher, J.A.Golovchenko: Appl. Phys. Lett.33, 437 (1978)Google Scholar
  2. 2.
    H.W.Lo, A.Compaan: Phys. Rev. Lett.44, 1604 (1980)Google Scholar
  3. 3.
    J.A. VanVechten: InLaser and Electron Beam Processing of Materials, ed. by C.N. White and P.S. Peery (Academic Press 1980) p. 53Google Scholar
  4. 4.
    B.Stritzker, A.Pospieszczyk, J. A.Tagle: Phys. Rev. Lett.47, 356 (1981)Google Scholar
  5. 5.
    B.A.Joyce, J.H.Neave: Surf. Sci.27, 499 (1971)Google Scholar
  6. 6.
    B.Carrière, J.P.Deville: Surf. Sci.80, 278 (1979)Google Scholar
  7. 7.
    N.Lieske, R.Hezel: Thin Solid Film61, 217 (1979)Google Scholar
  8. 8.
    R.Ludeke, A.Koma: Phys. Rev. Lett.34, 1170 (1975)Google Scholar
  9. 9.
    H.Ibach, J.E.Rowe: Phys. Rev. B9, 1951 (1974)Google Scholar
  10. 10.
    T.Adachi, C.R.Helms: Appl. Phys. Lett.35, 199 (1979)Google Scholar
  11. 11.
    D.M.Zehner, C.W.White, G.W.Ownby: Appl. Phys. Lett.36, 56 (1980); A.McKinley, A.W. Parke, G.J. Hughes, J. Fryar, R.H. Williams: J. Phys. D (Appl. Phys.)13, L 193 (1980)Google Scholar
  12. 12.
    R.F.Wood, G.E.Giles: Phys. Rev. B23, 2923 (1981)Google Scholar
  13. 13.
    M.Commandré, J.Derrien, A.Cros, F.Salvan, G.Sarrabayrouse, J. Buxo: InInsulating Films on Semiconductors, ed by M.Schulz and G.Pensl, Springer Ser. Electrophys.7 (Springer, Berlin, Heidelberg, New York 1981) p. 68Google Scholar
  14. 14.
    M.Commandré, B.Agius, J. Dernen, A. Cros, F. Salvan: unpublished resultsGoogle Scholar
  15. 15.
    R.Pretorius, W.Strydom, J.W.Mayer, C.Comrie: Phys. Rev. B22, 1885 (1980)Google Scholar
  16. 16.
    E.Rosencher, A.Straboni, S.Rigo, G.Amsel: Appl. Phys. Lett.34, 254 (1979)Google Scholar
  17. 17.
    S.M.Metev, S.K.Savtchenko, K.V.Stamenov, V.P.Veiko, G.A. Kotov, G.D. Shandibina: IEEE J. QE-17, 2004 (1981)Google Scholar

Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • A. Cros
    • 1
  • F. Salvan
    • 1
  • J. Derrien
    • 2
  1. 1.Faculté de Marseille-Luminy, Département de PhysiqueERA-CNRS 373Marseille Cedex 9France
  2. 2.I.S.E.A.Université de Haute-AlsaceMulhouse CedexFrance

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