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Applied Physics A

, Volume 28, Issue 4, pp 241–245 | Cite as

Laser-induced oxidation of the Si(111) surface

  • A. Cros
  • F. Salvan
  • J. Derrien
Contributed Papers
Received:
Accepted:

Abstract

Pulsed laser induced oxidation of clean Si(111) surfaces has been studied by Auger electron spectroscopy and electron energy loss spectroscopy. The short duration time of the pulse has allowed a precise investigation of the first stages of the oxidation. About 1–2 oxide monolayers first grow in less than 10 μs. Their stoichiometry evolves from SiOx towards SiO2 with increasing beam energy densities. Once this superficial layer has formed, no evolution is seen with further irradiation, suggesting that oxygen diffusion during the pulse duration cannot sustain the oxide growth.

PACS

81.60.-j 68.55. +h 82.80.Pv 
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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • A. Cros
    • 1
  • F. Salvan
    • 1
  • J. Derrien
    • 2
  1. 1.Faculté de Marseille-Luminy, Département de PhysiqueERA-CNRS 373Marseille Cedex 9France
  2. 2.I.S.E.A.Université de Haute-AlsaceMulhouse CedexFrance

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