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Laser-induced chemical etching of silicon in chlorine atmosphere

II. Continuous irradiation

Abstract

Laser-induced chemical etching of single-crystalline (100) Si in Cl2 atmosphere has been investigated for continuous Ar+ and Kr+ laser irradiation at around 351 nm, and at 457.9, 488.0, 514.5, and 647.1 nm. For laser irradiances below 105 W/cm2 the etching mechanism is non-thermal, and is based on photo-generated electron-hole pairs within the Si surface and Cl atoms produced within the gas phase. The experimental results are compared with model calculations.

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Mogyorósi, P., Piglmayer, K., Kullmer, R. et al. Laser-induced chemical etching of silicon in chlorine atmosphere. Appl. Phys. A 45, 293–299 (1988). https://doi.org/10.1007/BF00617934

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PACS

  • 81.60
  • 82.65
  • 42.60